类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 行间距 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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![]() | NTHD4401PT1 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | -20V | 1.1W | C 弯管 | 240 | not_compliant | -2.1A | 30 | NTHD4401P | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.1W | 2 P-Channel (Dual) | SWITCHING | 155m Ω @ 2.1A, 4.5V | 1.2V @ 250μA | 300pF @ 10V | 6nC @ 4.5V | 13ns | 20V | 13 ns | 2.1A | 12V | 0.155Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 50 pF | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
EMH2407-S-TL-H | ON Semiconductor | 数据表 | 12000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | 1.3W | 6A | 20V | 25mOhm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7530TRPBF | Infineon Technologies | 数据表 | 500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 2 | 36 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 30mOhm | Matte Tin (Sn) | 超低电阻 | 20V | 1.3W | 鸥翼 | 5.4A | IRF7530PBF | Dual | 增强型MOSFET | 1.3W | 8.5 ns | 2 N-Channel (Dual) | 30m Ω @ 5.4A, 4.5V | 1.2V @ 250μA | 1310pF @ 15V | 26nC @ 4.5V | 11ns | 16 ns | 5.4A | 1.2V | 12V | 20V | 40A | 33 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 1.2 V | 860μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF7313TRPBF | Infineon Technologies | 数据表 | 450 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 26 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29mOhm | HIGH RELIABILITY, AVALANCHE RATED | 30V | 2W | 鸥翼 | 6.5A | IRF7313PBF | 6.3 mm | 2 | Dual | 增强型MOSFET | 2W | 8.1 ns | 2 N-Channel (Dual) | SWITCHING | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 8.9ns | 17 ns | 6.5A | 1V | 20V | 30V | 30A | 30V | METAL-OXIDE SEMICONDUCTOR | 68 ns | 150°C | Standard | 1 V | 1.75mm | 4.9784mm | 4.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
TT8J13TCR | ROHM Semiconductor | 数据表 | 12000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | SILICON | 2 | 150°C TJ | Cut Tape (CT) | 2011 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 1W | 未说明 | 未说明 | 8 | R-PDSO-F8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1W | 2 P-Channel (Dual) | SWITCHING | 62m Ω @ 2.5A, 4.5V | 1V @ 1mA | 2000pF @ 6V | 16nC @ 4.5V | 12V | 2.5A | 0.062Ohm | 5A | 12V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.5V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7103TRPBF | Infineon Technologies | 数据表 | 100000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | IRF7103TRPBF | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 130mOhm | 逻辑电平兼容 | 50V | 2W | 鸥翼 | 3A | IRF7103PBF | 6.3 mm | Dual | 增强型MOSFET | 2W | 5.1 ns | 2 N-Channel (Dual) | SWITCHING | 130m Ω @ 3A, 10V | 3V @ 250μA | 290pF @ 25V | 30nC @ 10V | 8ns | 25 ns | 3A | 3V | 20V | 3A | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 100 ns | Standard | 3 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||||||||
SP8M6FU6TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 5A 3.5A | 35 ns | 150°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | 2W | unknown | *M6 | 增强型MOSFET | 2W | N and P-Channel | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 230pF @ 10V | 3.9nC @ 5V | 15ns | N-CHANNEL AND P-CHANNEL | 10 ns | 3.5A | 20V | 5A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6332C-F085P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ACTIVE, NOT REC (Last Updated: 3 days ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 2 | 700mA Ta 600mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101 | yes | 活跃 | 1 (Unlimited) | 6 | DUAL | 鸥翼 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 300mW Ta | N and P-Channel | SWITCHING | 300m Ω @ 700mA, 4.5V, 420m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 113pF @ 10V 114pF @ 10V | 1.5nC @ 4.5V, 2nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 0.7A | 0.3Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 0.3W | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC3025LDV-13 | Diodes Incorporated | 数据表 | 5590 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 8-PowerVDFN | 15A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e3 | 活跃 | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | N and P-Channel | 25m Ω @ 7A, 10V | 2.4V @ 250μA | 500pF @ 15V 1188pF @ 15V | 4.6nC @ 4.5V, 9.5nC @ 4.5V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSL315PL6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | YES | SILICON | 1.5A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 鸥翼 | 未说明 | 未说明 | BSL315 | 6 | R-PDSO-G6 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 P-Channel (Dual) | 150m Ω @ 1.5A, 10V | 2V @ 11μA | 282pF @ 15V | 2.3nC @ 5V | 30V | 1.5A | 0.15Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 84 pF | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N61NU,LF | Toshiba Semiconductor and Storage | 数据表 | 35500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 6 | 2W | 无铅 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 2W | 2 N-Channel (Dual) | SWITCHING | 33m Ω @ 4A, 4.5V | 1V @ 1mA | 410pF @ 10V | 3.6nC @ 4.5V | 20V | 4A | 4A | 0.033Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.5V Drive | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN6A09DN8TC | Diodes Incorporated | 数据表 | 9200 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 25.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 哑光锡 | 60V | 1.25W | 鸥翼 | 260 | 4.4A | 40 | 8 | 不合格 | 2 | 增强型MOSFET | 1.25W | 4.9 ns | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 8.2A, 10V | 3V @ 250μA | 1407pF @ 40V | 24.2nC @ 5V | 5ns | 5 ns | 4.3A | 20V | 3.9A | 0.045Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
AOD604 | Alpha & Omega Semiconductor Inc. | 数据表 | 37650 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | TO-252-6, DPak (5 Leads + Tab) | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | 1.7W | unknown | 1.6W 1.7W | N and P-Channel | 33m Ω @ 8A, 10V | 3V @ 250μA | 404pF @ 20V | 9.2nC @ 10V | 40V | 8A | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM4953DCS RLG | Taiwan Semiconductor Corporation | 数据表 | 76325 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | 4.9A Ta | -55°C~150°C TJ | Digi-Reel® | 2015 | 活跃 | 3 (168 Hours) | 2.5W | 2 P-Channel (Dual) | 60mOhm @ 4.9A, 10V | 3V @ 250μA | 745pF @ 15V | 28nC @ 10V | 30V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM4946DCS RLG | Taiwan Semiconductor Corporation | 数据表 | 76325 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4.5A Ta | 2 | -55°C~150°C TJ | Digi-Reel® | 2010 | 活跃 | 3 (168 Hours) | 8 | EAR99 | ULTRA-LOW RESISTANCE | 8541.29.00.95 | 鸥翼 | 260 | 30 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.4W | 2 N-Channel (Dual) | SWITCHING | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 910pF @ 24V | 18nC @ 10V | 60V | 4.5A | 0.055Ohm | 30A | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SLA5086 | Sanken | 数据表 | 32 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 通孔 | 通孔 | 12-SIP | SILICON | 5 | 150°C TJ | Tube | 2001 | yes | 不用于新设计 | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 5W | SINGLE | 未说明 | 未说明 | 12 | R-PSFM-T12 | 不合格 | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | 5W | 5 P-Channel, Common Source | 220m Ω @ 3A, 10V | 2V @ 250μA | 790pF @ 10V | 60V | 5A | 5A | 0.22Ohm | 10A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMC8298 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | Die | 210mg | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 150°C | -55°C | Single | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N06S4L14ATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 40 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Discontinued | 1 (Unlimited) | 8 | EAR99 | 逻辑电平兼容 | 50W | FLAT | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 8 ns | 50W | 2 N-Channel (Dual) | 13.7m Ω @ 17A, 10V | 2.2V @ 20μA | 2890pF @ 25V | 39nC @ 10V | 2ns | 15 ns | 20A | 16V | 60V | 0.0137Ohm | 90 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110900APAL | Advanced Linear Devices Inc. | 数据表 | 95 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | Dual | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | 500Ohm @ 4V | 10mV @ 1μA | 2.5pF @ 5V | 10.6V | 12mA | 10.6V | 10V | 2.5pF | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SLA5037 | Sanken | 数据表 | 137 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 通孔 | 通孔 | 12-SIP | SILICON | 4 | 150°C TJ | Tube | 2001 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 5W | SINGLE | 未说明 | 未说明 | 12 | R-PSFM-T12 | 不合格 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 5W | 4 N-Channel | 80m Ω @ 5A, 10V | 2V @ 250mA | 1630pF @ 10V | 100V | 10A | 0.08Ohm | 40A | 100V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSD340NH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | 2013 | yes | Obsolete | 1 (Unlimited) | EAR99 | 未说明 | 未说明 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN21D1UDA-7B | Diodes Incorporated | 数据表 | 10000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 6-SMD, No Lead | 455mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | e3 | 活跃 | Matte Tin (Sn) | 未说明 | 未说明 | 310mW | 2 N-Channel (Dual) | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 31pF @ 15V | 0.41nC @ 4.5V | 20V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HUF76407DK8T | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | -55°C~150°C TJ | Tape & Reel (TR) | UltraFET™ | Obsolete | 1 (Unlimited) | 2.5W | 2 N-Channel (Dual) | 90mOhm @ 3.8A, 10V | 3V @ 250μA | 330pF @ 25V | 11.2nC @ 10V | 60V | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMM75-01F | IXYS | 数据表 | 11 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 32 Weeks | 通孔 | 通孔 | i4-Pac™-5 | 5 | SILICON | 2 | 80 ns | -55°C~150°C TJ | Tube | 2004 | HiPerFET™ | e1 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 未说明 | 未说明 | FMM | 5 | 不合格 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 增强型MOSFET | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | 60ns | 100V | 60 ns | 75A | 20V | 0.021Ohm | 100V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
SP8K24FU6TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 150°C TJ | Tape & Reel (TR) | 2006 | Obsolete | 1 (Unlimited) | SMD/SMT | EAR99 | 2W | Dual | 2W | 2 N-Channel (Dual) | 25m Ω @ 6A, 10V | 2.5V @ 1mA | 1400pF @ 10V | 21.6nC @ 5V | 45V | 6A | 2.5V | 45V | 逻辑电平门 | 2.5 V | 无SVHC | ROHS3 Compliant |
NTHD4401PT1
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
EMH2407-S-TL-H
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
3.595031
IRF7530TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7313TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
TT8J13TCR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IRF7103TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
SP8M6FU6TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDG6332C-F085P
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMC3025LDV-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
6.664266
BSL315PL6327HTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N61NU,LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
4.690034
ZXMN6A09DN8TC
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
AOD604
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
TSM4953DCS RLG
Taiwan Semiconductor Corporation
分类:Transistors - FETs, MOSFETs - Arrays
7.846524
TSM4946DCS RLG
Taiwan Semiconductor Corporation
分类:Transistors - FETs, MOSFETs - Arrays
9.341419
SLA5086
Sanken
分类:Transistors - FETs, MOSFETs - Arrays
54.189021
FDMC8298
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IPG20N06S4L14ATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
ALD110900APAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
80.569522
SLA5037
Sanken
分类:Transistors - FETs, MOSFETs - Arrays
BSD340NH6327XTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DMN21D1UDA-7B
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
3.873438
HUF76407DK8T
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FMM75-01F
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
165.295064
SP8K24FU6TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
